- 您现在的位置：买卖IC网 > Sheet目录463 > IXTP140N055T2 (IXYS)MOSFET N-CH 55V 140A TO-220
Preliminary Technical Information
Trench T2 TM
Power MOSFET
IXTA140N055T2
IXTP140N055T2
V DSS
I D25
R DS(on)
= 55V
= 140A
≤ 5.4m Ω
N-Channel Enhancement Mode
Avalanche Rated
TO-263 (IXTA)
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C, R GS = 1M Ω
55
55
V
V
G
S
(TAB)
V GSM
I D25
I LRMS
I DM
Transient
T C = 25 ° C
Lead Current Limit, RMS
T C = 25 ° C, pulse width limited by T JM
± 20
140
75
350
V
A
A
A
TO-220 (IXTP)
I A
E AS
T C = 25 ° C
T C = 25 ° C
70
600
A
mJ
G
D
S
(TAB)
P D
T J
T C = 25 ° C
250
-55 ... +175
W
° C
G = Gate
S = Source
D = Drain
TAB = Drain
T JM
175
° C
T stg
T L
T sold
M d
Weight
1.6mm (0.062in.) from case for 10s
Plastic body for 10 seconds
Mounting torque (TO-220)
TO-263
TO-220
-55 ... +175
300
260
1.13 / 10
2.5
3.0
° C
° C
° C
Nm/lb.in.
g
g
Features
International standard packages
175°C Operating Temperature
High current handling capability
Avalanche rated
Low R DS(on)
Advantages
Easy to mount
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Space savings
High power density
BV DSS
V GS = 0V, I D = 250 μ A
55
V
V GS(th)
V DS = V GS , I D = 250 μ A
2.0
4.0
V
Applications
I GSS
V GS = ± 20V, V DS = 0V
± 200 nA
Automotive
I DSS
V DS = V DSS
V GS = 0V
T J = 150 ° C
5 μ A
150 μ A
- Motor Drives
- 12V Battery
- ABS Systems
R DS(on)
V GS = 10V, I D = 50A, Notes 1, 2
5.4 m Ω
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching Applications
? 2008 IXYS CORPORATION, All rights reserved
DS100067(10/08)
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IXTP14N60PM
MOSFET N-CH 600V 7A TO-220
IXTP170N075T2
MOSFET N-CH 75V 170A TO-220
IXTP18N60PM
MOSFET N-CH TO-220
IXTP1N100P
MOSFET N-CH 1000V 1A TO-220
IXTP1N100
MOSFET N-CH 1000V 1.5A TO-220AB
IXTP1R6N50P
MOSFET N-CH 500V 1.6A TO-220
IXTP200N085T
MOSFET N-CH 85V 200A TO-220
IXTP220N075T
MOSFET N-CH 75V 220A TO-220
相关代理商/技术参数
IXTP140P05T
功能描述:MOSFET -140 Amps -50V 0.008 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP14N60P
功能描述:MOSFET 14.0 Amps 600 V 0.55 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP14N60PM
功能描述:MOSFET Polar MOS
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP152N085T
功能描述:MOSFET MOSFET Id152 BVdass85 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP15N20T
功能描述:MOSFET 15 Amps 200V 180 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP15N25MA
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 15A I(D) | TO-220(5)
IXTP15N25MB
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 15A I(D) | TO-220(5)
IXTP15N30MA
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 15A I(D) | TO-220(5)
